用于未来发射/接收模块的GaN/SiC mmic和封装

M. Oppermann, Felix Thurow, B. Bunz
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引用次数: 4

摘要

未来的应用,如新型多功能传感器(如监视雷达),将实现具有成本效益和高产量的制造解决方案,如大批量基于SMD的电子产品。将展示和比较主要用于功率器件的不同封装类型,例如QFN (Quad Flat no-Lead)和L/HTCC(低/高温共烧陶瓷)技术的陶瓷封装。下一代GaN(氮化镓)mmic将在同一芯片上覆盖更多功能。因此,具有更高数量RF接口的特定封装设计是强制性的。多功能mmic将允许非常紧凑的T/R(发送/接收)模块设计,并将减少基于PCB(印刷电路板)的模块解决方案中使用的有源器件和封装的数量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
GaN/SiC MMICs and packaging for use in future transmit / receive modules
Future applications like new types of multifunctional sensors (e.g. surveillance radar) will be realised with cost-effective and high yield manufacturing solutions, like high-volume SMD based electronic products. Different package types, e.g. QFN (Quad Flat no-Lead) and ceramic based packages in L/HTCC (Low/High Temperature Cofired Ceramic) technology, mainly used for power devices will be shown and compared. Next generation of GaN (Gallium Nitride) MMICs will cover more functionalities on the same chip. Therefore specific package designs with higher number of RF interfaces are mandatory. Multifunctional MMICs will allow very compact T/R (Transmit/Receive) module designs, and will reduce the number of active devices and packages used in PCB (Printed Circuit Board) based module solutions.
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