带集成功率检测器的宽带放大器，适用于100ghz至200ghz毫米波应用

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550856

Paul Stärke, V. Riess, C. Carta, F. Ellinger

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引用次数: 3

摘要

这项工作提出了一种毫米波应用放大器，峰值增益为26 dB，可用带宽高达98 GHz。该设计针对100 GHz至200 GHz的工作频率进行了优化，可提供高达3 dBm的中等输出功率水平。直流总功耗为70mW。为了允许在超宽带通信系统中使用，组延迟变化保持在5ps以下。作为附加功能，一个具有大动态范围的功率检测器，覆盖放大器的线性区域，集成在输出端，允许直接测量输出信号电平。该电路采用130 nm SiGe BiCMOS工艺制造，$\mathbf{f}_{\max}$为500 GHz，核心面积仅为0.15 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wideband Amplifier with Integrated Power Detector for 100 GHz to 200 GHz mm-Wave Applications

This work presents an amplifier for mm-wave applications reaching a peak gain of 26 dB with a usable bandwidth of up to 98 GHz. The design is optimized for an operating frequency between 100 GHz to 200 GHz and can deliver medium output power levels up to 3 dBm. The total dc power consumption is 70mW. To allow the use in ultra wideband communication systems the group delay variation is kept below 5 ps. As additional feature a power detector with a large dynamic range, covering the linear region of the amplifier, is integrated at the output to allow a direct measurement of the outgoing signal levels. The circuit is fabricated in a 130 nm SiGe BiCMOS process with $\mathbf{f}_{\max}$ of 500 GHz and covers a core area of only 0.15 mm2.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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