芯片内光通信用纳米印迹单模波导结构的设计、制造与表征

J. Justice, U. Khan, T. Korhonen, A. Boersma, S. Wiegersma, M. Karppinen, B. Corbett
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引用次数: 3

摘要

在信息和通信技术(ICT)领域,由于微处理器性能的提高和需要访问不断增加的存储数据量,对带宽的需求不断增长。光学数据传输(如玻璃纤维)取代电子传输(如铜线)的引入缓解了距离大于10米的通信的带宽问题,然而,对距离较短的光学数据传输(如计算机内部的传输)的需求已经出现。一种可能的解决方案是使用低成本的单模聚合物基光波导,这种波导是由直接图案化纳米压印光刻(NIL)制造的。NIL已经成为一种可扩展的制造技术,能够生产低至100纳米尺度的特征,具有大规模(卷对卷)制造的潜力。在本文中,我们介绍了低损耗ORMOCER™材料中单模波导和光学元件的建模,制造和表征结果。采用片级零耦合工艺,制备了模场直径为7 μm的单模波导和适用于1550 nm光互连的弯管、定向耦合器和多模干涉仪等无源结构。由纳米压印技术引起的工艺问题,如残余层和倾斜的侧壁,模拟和研究了多余的损失和高阶模式激发。总结了纳米压印技术在芯片级/板级光互连电路制造中的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design, fabrication and characterisation of nano-imprinted single mode waveguide structures for intra-chip optical communications
In the Information and Communications Technology (ICT) sector, the demands on bandwidth continually grow due to increased microprocessor performance and the need to access ever increasing amounts of stored data. The introduction of optical data transmission (e.g. glass fiber) to replace electronic transmission (e.g. copper wire) has alleviated the bandwidth issue for communications over distances greater than 10 meters, however, the need has arisen for optical data transfer over shorter distances such as those found inside computers. A possible solution for this is the use of low–cost single mode polymer based optical waveguides fabricated by direct patterning Nanoimprint Lithography (NIL). NIL has emerged as a scalable manufacturing technology capable of producing features down to the hundred nanometer scale with the potential for large scale (roll-to-roll) manufacturing. In this paper, we present results on the modeling, fabrication and characterization of single mode waveguides and optical components in low-loss ORMOCER™ materials. Single mode waveguides with a mode field diameter of 7 μm and passive structures such as bends, directional couplers and multi-mode interferometers (MMIs) suitable for use in 1550 nm optical interconnects were fabricated using wafer scale NIL processes. Process issues arising from the nano-imprint technique such as residual layers and angled sidewalls are modeled and investigated for excess loss and higher order mode excitation. Conclusions are drawn on the applicability of nano-imprinting to the fabrication of circuits for intrachip/ board-level optical interconnect.
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