聚酰亚胺支持40兆赫PVDF传感器

J. Ketterling, O. Aristizábal, D. Turnbull
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引用次数: 5

摘要

单元件聚焦PVDF换能器由于其宽带宽(BW)和易于制造而广泛用于高频(> 30 MHz)超声成像。本文介绍了一种利用聚偏氟乙烯(PVDF)环氧键合的覆铜聚酰亚胺(CCP)薄膜制造高频换能器(包括单元件和环形阵列)的方法。为了验证这种制造技术,将单元件PVDF(9微米厚)换能器和具有五个环的环形阵列组装在一起。通过测量中心频率、分数-6 db BW和双向插入损耗(IL),定量地比较了换能器的性能。从放置在几何焦点处的石英板的脉冲回波信号测量BW和IL。使用定制的超声后向散射显微镜获得的小鼠胚胎CCP背衬换能器b模图像与标准的单元件PVDF换能器质量相当。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polyimide backed 40-MHz PVDF transducers
Single-element focused PVDF transducers are widely used for high-frequency (> 30 MHz) ultrasound imaging because of their broad bandwidth (BW) and ease of fabrication. A method of fabricating high-frequency transducers (both single element and annular arrays) using a copper-clad polyimide (CCP) film epoxy-bonded to PVDF is presented here. To validate this fabrication technique, single-element PVDF (9-µ mt hick) transducers and an annular array with five rings were assem- bled. Transducer performance was compared quantitatively by measuring center frequency, fractional -6-dB BW and two-way insertion loss (IL). BW and IL were measured from pulse- echo signals from a quartz plate positioned at the geometric focus. CCP backed transducer B-mode images of mouse embryos, acquired using a custom ultrasound backscatter microscope, were of equivalent quality as standard single element PVDF transducers.
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