0.2/spl mu/m栅极长度，外源ft=62 GHz的非合金AlInAs/GaInAs JHEMTs

52nd Annual Device Research Conference Pub Date : 1994-06-20 DOI:10.1109/DRC.1994.1009453

J. Shealy, M. Mondry, M. Heimbuch, M. Thompson, S. Denbaars

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引用次数: 1

摘要

最近，我们证明了改善击穿特性在1 -pm栅极长度AlInAdGaInAs HEMT利用(1)连接调制2- deg和(2)欧姆接触区再生长的MOCVD[1]。剩下的挑战是演示具有改进击穿特性的高频器件。我们提出了一种具有高频性能和高击穿特性的0.2pm结调制HEMT (JHEMT)。

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0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz

Recently, we demonstrated improved breakdown characteristics in 1 -pm gate length AlInAdGaInAs HEMT utilizing (1) ajunction to modulate the 2-DEG and (2) regrowth of the ohmic contact regions by MOCVD[1]. The remaining challenge has been to demonstrate a high frequency device with improved breakdown characteristics. We present a 0.2pm junction modulated HEMT (JHEMT) with both high frequency performance as well as high breakdown characteristics.

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52nd Annual Device Research Conference

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