{"title":"90nm CMOS中370GHz GBW的锥形级联多级分布式放大器","authors":"A. Arbabian, A. Niknejad","doi":"10.1109/RFIC.2008.4561385","DOIUrl":null,"url":null,"abstract":"A tapered cascaded multi-stage distributed amplifier (T-CMSDA) has been designed and fabricated in a 90 nm digital CMOS process. The amplifier achieves a 3-dB bandwidth of 73.5 GHz with a pass-band gain of 14 dB. This results in a gain-bandwidth (GBW) product of 370 GHz. The realized zero-dB BW is 83.5 GHz and the input and output matchings stay better than -9 dB up to 77 and 94 GHz, respectively. The chip consumes an area of 1.5 mm by 1.15 mm while drawing 70 mA from a 1.2 V supply.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"A tapered cascaded multi-stage distributed amplifier with 370GHz GBW in 90nm CMOS\",\"authors\":\"A. Arbabian, A. Niknejad\",\"doi\":\"10.1109/RFIC.2008.4561385\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A tapered cascaded multi-stage distributed amplifier (T-CMSDA) has been designed and fabricated in a 90 nm digital CMOS process. The amplifier achieves a 3-dB bandwidth of 73.5 GHz with a pass-band gain of 14 dB. This results in a gain-bandwidth (GBW) product of 370 GHz. The realized zero-dB BW is 83.5 GHz and the input and output matchings stay better than -9 dB up to 77 and 94 GHz, respectively. The chip consumes an area of 1.5 mm by 1.15 mm while drawing 70 mA from a 1.2 V supply.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561385\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561385","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A tapered cascaded multi-stage distributed amplifier with 370GHz GBW in 90nm CMOS
A tapered cascaded multi-stage distributed amplifier (T-CMSDA) has been designed and fabricated in a 90 nm digital CMOS process. The amplifier achieves a 3-dB bandwidth of 73.5 GHz with a pass-band gain of 14 dB. This results in a gain-bandwidth (GBW) product of 370 GHz. The realized zero-dB BW is 83.5 GHz and the input and output matchings stay better than -9 dB up to 77 and 94 GHz, respectively. The chip consumes an area of 1.5 mm by 1.15 mm while drawing 70 mA from a 1.2 V supply.
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