可制造的纳米设计使用标准电池与规则布局

K. Subramaniyan, P. Larsson-Edefors
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引用次数: 4

摘要

除了性能考虑外,在纳米级工艺技术节点上设计VLSI电路还需要考虑与可制造性和成本相关的因素。众所周知,规则的布局模式可以增强对随机以及某些类型的系统变化的弹性。在本文中,我们使用关键特征分析(CFA)的设计自动化和原始度量(如通过计数)来评估这种布局规则的含义。使用ISCAS'89基准测试套件,对于每个基准测试电路,我们比较了基于半规则和超规则单元布局的放置和路由实现。虽然CFA反直觉地表明,使用超规则布局的实现比使用半规则布局的实现具有更低的可制造性设计(DFM)分数,但我们发现,超规则布局的实现平均减少了22%的过孔,代价是增加了一小段导线长度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Manufacturable nanometer designs using standard cells with regular layout
In addition to performance considerations, designing VLSI circuits at nanometer-scale process technology nodes demands considerations related to manufacturability and cost. Regular layout patterns are known to enhance resilience to random as well as certain types of systematic variations. In this contribution we assess the implications of this layout regularity using design automation for Critical Feature Analysis (CFA) and raw metrics, such as via count. Using the ISCAS'89 benchmark suite, for each benchmark circuit we compare place-and-route implementations that are based on semi-regular and ultra-regular cell layouts. While the CFA counter-intuitively suggests that implementations using ultra-regular layouts have lower Design for Manufacturability (DFM) scores than those using semi-regular layouts, we find that ultra-regular layouts yield implementations with an average of 22% fewer vias at the cost of a small wire length increase.
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