高灵敏度radfet辐照响应和退火模型的综述与比较

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696175

M. Benito-Parejo, S. Ibarmia, P. Portillo

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引用次数: 0

摘要

比较了不同的RADFET对辐照和退火过程的响应模型。将三种辐照模式与高灵敏度radfet实验数据进行了比较。然后，对三种退火模型进行了比较。两组实验数据用于比较:第一组是在高剂量率的Co-60照射运动中获得的，第二组是在高能质子线中获得的。最后，我们比较了得到的质子模型和Co-60模型。

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Review and Comparison of Irradiation Response and Annealing Models for High-Sensitivity RADFETs

A comparison between different RADFET response models to irradiation and annealing processes has been carried out. Three irradiation models have been compared against high-sensitivity RADFETs experimental data. Afterwards, the comparison has been performed with three annealing models. Two sets of experimental data are used for the comparison: first set was obtained during a high-dose rate irradiation campaign with Co-60, and second set during a high-energy proton line. Finally, we compare the obtained models for proton and Co-60.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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