CaCu/sub 3/Ti/sub 4/O/sub 12/薄膜的介电性能

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195901

Kyuho Cho, N. Wu, A. Ignatiev, Jianren Li

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引用次数: 1

摘要

采用脉冲激光沉积(PLD)方法，成功地在LaAlO/sub 3/(100) (LAO)晶体基底上生长了高介电CaCu/sub 3/Ti/sub 4/O/sub 12/ (CCTO)薄膜，并在LaAlO/sub 3/(100) (LAO)基底上生长了SrRuO/sub 3/(SRO)导电薄膜。研究了(001)取向(CCTO)外延薄膜的微观结构和介电性能，并通过x射线衍射、直流电导率和介电测量与CCTO多晶体样品进行了比较。多晶CCTO中大于20,000的巨大介电常数可以用IBLC模型来解释。然而，该模型无法解释外延CCTO/SRO/LAO薄膜具有高直流导电性的大介电常数行为。XPS分析表明，氧空位可能是导致薄膜电阻率低的一个原因。

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Dielectric properties of CaCu/sub 3/Ti/sub 4/O/sub 12/ thin films

High dielectric CaCu/sub 3/Ti/sub 4/O/sub 12/ (CCTO) thin films were successfully grown on LaAlO/sub 3/(100) (LAO) crystalline substrates and on SrRuO/sub 3/(SRO) conductive films on LAO substrates by the pulsed laser deposition (PLD) method. Microstructure and dielectric properties of (001) oriented (CCTO) epitaxial thin films were evaluated, and compared to those of CCTO polycrystalline bulk samples by x-ray diffraction, DC conductivity and dielectric measurements. The gigantic dielectric constant of greater than 20,000 in polycrystalline CCTO can be accounted for by the internal barrier layer capacitance (IBLC) model. However, this model fails to explain the large dielectric constant behavior for epitaxial CCTO/SRO/LAO thin films which also show high DC conductivity. XPS analysis indicated that oxygen vacancies could be a possible factor responsible for the low resistivity of thin film.

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来源期刊

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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