p(+)-多栅极p沟道MOSFET中新型孔栅电流分量的观察

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194733

F. Driussi, D. Esseni, L. Selmi, F. Piazza

{"title":"p(+)-多栅极p沟道MOSFET中新型孔栅电流分量的观察","authors":"F. Driussi, D. Esseni, L. Selmi, F. Piazza","doi":"10.1109/ESSDERC.2000.194733","DOIUrl":null,"url":null,"abstract":"This paper reports experimental evidence of a new, substrate-enhanced component of the gate current of -poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate and substrate bias on devices featuring three different drain engineering options. The new current component is ascribed to an impact ionization feedback mechanism similar to that responsible of CHISEL in nMOSFETs.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Observation of a New Hole Gate Current Component in p(+)-poly Gate p-channel MOSFET's\",\"authors\":\"F. Driussi, D. Esseni, L. Selmi, F. Piazza\",\"doi\":\"10.1109/ESSDERC.2000.194733\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports experimental evidence of a new, substrate-enhanced component of the gate current of -poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate and substrate bias on devices featuring three different drain engineering options. The new current component is ascribed to an impact ionization feedback mechanism similar to that responsible of CHISEL in nMOSFETs.\",\"PeriodicalId\":354721,\"journal\":{\"name\":\"30th European Solid-State Device Research Conference\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2000.194733\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194733","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文报道了一种新型基板增强pMOS晶体管栅极电流元件的实验证据。该现象的特征是漏极、栅极和衬底偏置在具有三种不同漏极工程选择的器件上的函数。新的电流元件归因于与nmosfet中的CHISEL类似的冲击电离反馈机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Observation of a New Hole Gate Current Component in p(+)-poly Gate p-channel MOSFET's

This paper reports experimental evidence of a new, substrate-enhanced component of the gate current of -poly gate pMOS transistors. The phenomenon is characterized as a function of drain, gate and substrate bias on devices featuring three different drain engineering options. The new current component is ascribed to an impact ionization feedback mechanism similar to that responsible of CHISEL in nMOSFETs.

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30th European Solid-State Device Research Conference

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