用于W- cdma基站的240w推挽式GaAs功率场效应管

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.862310

K. Inoue, K. Ebihara, H. Haematsu, T. Igarashi, H. Takahashi, J. Fukaya

{"title":"用于W- cdma基站的240w推挽式GaAs功率场效应管","authors":"K. Inoue, K. Ebihara, H. Haematsu, T. Igarashi, H. Takahashi, J. Fukaya","doi":"10.1109/MWSYM.2000.862310","DOIUrl":null,"url":null,"abstract":"A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"A 240 W push-pull GaAs power FET for W-CDMA base stations\",\"authors\":\"K. Inoue, K. Ebihara, H. Haematsu, T. Igarashi, H. Takahashi, J. Fukaya\",\"doi\":\"10.1109/MWSYM.2000.862310\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.862310\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.862310","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 20

摘要

研制了一种用于下一代蜂窝基站系统的240瓦功率场效应管。FET由四个60w芯片组成，采用我们的高效率和低失真器件技术，组合在一个推挽结构中。开发的FET在2.14 GHz时实现了240 W (53.8 dBm)的输出功率，11.2 dB的线性增益和54%的功率附加效率。这是采用GaAs FET技术的最高输出功率器件。

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A 240 W push-pull GaAs power FET for W-CDMA base stations

A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology.

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来源期刊

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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