用于W- cdma基站的240w推挽式GaAs功率场效应管

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.862310

K. Inoue, K. Ebihara, H. Haematsu, T. Igarashi, H. Takahashi, J. Fukaya

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引用次数: 20

摘要

研制了一种用于下一代蜂窝基站系统的240瓦功率场效应管。FET由四个60w芯片组成，采用我们的高效率和低失真器件技术，组合在一个推挽结构中。开发的FET在2.14 GHz时实现了240 W (53.8 dBm)的输出功率，11.2 dB的线性增益和54%的功率附加效率。这是采用GaAs FET技术的最高输出功率器件。

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A 240 W push-pull GaAs power FET for W-CDMA base stations

A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology.

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来源期刊

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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