{"title":"双节点电荷收集下的软误差免疫锁存","authors":"K. Katsarou, Y. Tsiatouhas","doi":"10.1109/IOLTS.2015.7229830","DOIUrl":null,"url":null,"abstract":"The susceptibility of memory elements (latches, flip-flops) to soft errors is increased as CMOS technology scales down, due to multi-node charge collection by the impact of energetic particles on silicon. Existing design solutions provide partial or no immunity to SEUs that affect a pair of nodes. In this work, we propose a new latch topology, which provides complete protection from SEU related double node charge sharing. Simulations results and comparisons on a variety of SEU tolerant techniques are presented to evaluate the efficiency of the proposed latch.","PeriodicalId":413023,"journal":{"name":"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Soft error immune latch under SEU related double-node charge collection\",\"authors\":\"K. Katsarou, Y. Tsiatouhas\",\"doi\":\"10.1109/IOLTS.2015.7229830\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The susceptibility of memory elements (latches, flip-flops) to soft errors is increased as CMOS technology scales down, due to multi-node charge collection by the impact of energetic particles on silicon. Existing design solutions provide partial or no immunity to SEUs that affect a pair of nodes. In this work, we propose a new latch topology, which provides complete protection from SEU related double node charge sharing. Simulations results and comparisons on a variety of SEU tolerant techniques are presented to evaluate the efficiency of the proposed latch.\",\"PeriodicalId\":413023,\"journal\":{\"name\":\"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IOLTS.2015.7229830\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 21st International On-Line Testing Symposium (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2015.7229830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Soft error immune latch under SEU related double-node charge collection
The susceptibility of memory elements (latches, flip-flops) to soft errors is increased as CMOS technology scales down, due to multi-node charge collection by the impact of energetic particles on silicon. Existing design solutions provide partial or no immunity to SEUs that affect a pair of nodes. In this work, we propose a new latch topology, which provides complete protection from SEU related double node charge sharing. Simulations results and comparisons on a variety of SEU tolerant techniques are presented to evaluate the efficiency of the proposed latch.