用于ULSI应用的锡封装铜互连

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference Pub Date : 1989-06-12 DOI:10.1109/VMIC.1989.78025

K. Hoshino, H. Yagi, H. Tsuchikawa

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引用次数: 9

摘要

通过氮化Cu-10% ti合金，研制了用于超大规模集成电路(ULSI)的tin封装Cu互连。在800℃渗氮后，将500 nm厚的Cu- ti合金层分离为上TiN层和下Cu层，其互连线具有比Cu互连线更高的抗氧化性，且电阻率同样低。新型铜互连材料的电迁移寿命比纯铜互连材料的电迁移寿命大两个数量级

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TiN-encapsulized copper interconnects for ULSI applications

TiN-encapsulized Cu interconnects were developed for ultra-large-scale integration (ULSI) by nitriding the Cu-10%Ti alloy. The 500-nm-thick Cu-Ti alloy layer was separated into an upper TiN layer and a lower Cu layer after nitriding at 800 degrees C. The interconnects had a higher oxidation resistance than Cu interconnects, and their resistivity was as low. The electromigration lifetime of the new interconnects was two orders of magnitude larger than that of pure Cu interconnects.<>

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Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference

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