高压(4kv)功率整流器PiN/MPS/SSD/SPEED的比较研究

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764085

S. Sawant, B. J. Baliga

{"title":"高压(4kv)功率整流器PiN/MPS/SSD/SPEED的比较研究","authors":"S. Sawant, B. J. Baliga","doi":"10.1109/ISPSD.1999.764085","DOIUrl":null,"url":null,"abstract":"This paper provides for the first time a comparative experimental study of different high voltage power rectifier structures designed based on the anode injection efficiency control concept. Trade-off curves of peak reverse current density, reverse recovery charge extracted and reverse dJ/dt versus forward voltage drop showed the merged PiN-Schottky (MPS), self-adapting P-emitter diode (SPEED), and static shielding diode (SSD) rectifiers to have far superior switching characteristics when compared to conventional PiN diodes. The uniform carrier distribution observed in the MPS/SPEED/SSD rectifiers leads to a universal trade-off curve in anode injection efficiency control diodes that is inherently superior to that obtained through lifetime control techniques. The SPEED rectifier is most attractive for high voltage applications due to its low reverse leakage current, while the MPS rectifier provides an excellent alternative to the high voltage PiN diode due to the identical fabrication process and its superior switching characteristics.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A comparative study of high voltage (4 kV) power rectifiers PiN/MPS/SSD/SPEED\",\"authors\":\"S. Sawant, B. J. Baliga\",\"doi\":\"10.1109/ISPSD.1999.764085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper provides for the first time a comparative experimental study of different high voltage power rectifier structures designed based on the anode injection efficiency control concept. Trade-off curves of peak reverse current density, reverse recovery charge extracted and reverse dJ/dt versus forward voltage drop showed the merged PiN-Schottky (MPS), self-adapting P-emitter diode (SPEED), and static shielding diode (SSD) rectifiers to have far superior switching characteristics when compared to conventional PiN diodes. The uniform carrier distribution observed in the MPS/SPEED/SSD rectifiers leads to a universal trade-off curve in anode injection efficiency control diodes that is inherently superior to that obtained through lifetime control techniques. The SPEED rectifier is most attractive for high voltage applications due to its low reverse leakage current, while the MPS rectifier provides an excellent alternative to the high voltage PiN diode due to the identical fabrication process and its superior switching characteristics.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764085\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 19

摘要

本文首次对基于阳极注入效率控制理念设计的不同高压功率整流器结构进行了对比实验研究。峰值反向电流密度、反向恢复电荷提取和反向dJ/dt与正向压降的权衡曲线表明，与传统的PiN二极管相比，合并的PiN- schottky (MPS)、自适应p -发射极二极管(SPEED)和静态屏蔽二极管(SSD)整流器具有优越的开关特性。在MPS/SPEED/SSD整流器中观察到的均匀载流子分布导致阳极注入效率控制二极管的通用权衡曲线，其本质上优于通过寿命控制技术获得的结果。SPEED整流器由于其低的反向漏电流而对高压应用最有吸引力，而MPS整流器由于相同的制造工艺和优越的开关特性而为高压引脚二极管提供了极好的替代方案。

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A comparative study of high voltage (4 kV) power rectifiers PiN/MPS/SSD/SPEED

This paper provides for the first time a comparative experimental study of different high voltage power rectifier structures designed based on the anode injection efficiency control concept. Trade-off curves of peak reverse current density, reverse recovery charge extracted and reverse dJ/dt versus forward voltage drop showed the merged PiN-Schottky (MPS), self-adapting P-emitter diode (SPEED), and static shielding diode (SSD) rectifiers to have far superior switching characteristics when compared to conventional PiN diodes. The uniform carrier distribution observed in the MPS/SPEED/SSD rectifiers leads to a universal trade-off curve in anode injection efficiency control diodes that is inherently superior to that obtained through lifetime control techniques. The SPEED rectifier is most attractive for high voltage applications due to its low reverse leakage current, while the MPS rectifier provides an excellent alternative to the high voltage PiN diode due to the identical fabrication process and its superior switching characteristics.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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