高k HfTaTiO栅极电介质，改善了材料和电学特性

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553129

N. Lu, H. Li, M. Gardner, D. Kwong

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引用次数: 3

摘要

本文首次系统地研究了HfTaTiO栅介质的物理和电学特性。HfTaTiO具有较高的介电常数(kappa~56)和可接受的Si势垒高度(phi=1.0eV)，实现了超薄EOT(~9Aring)。与HfO2相比，HfTaTiO具有更高的结晶温度(900℃)，降低了迟滞，迁移率提高了50%，并改善了Vth不稳定性。此外，HfTaTiO具有优异的SILC和击穿特性

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Higher k HfTaTiO gate dielectric with improved material and electrical characteristics

Physical and electrical characteristics of HfTaTiO gate dielectric have been systematically investigated for the first time. HfTaTiO has a higher dielectric constant (kappa~56) and acceptable barrier height to Si (phi=1.0eV), and ultra-thin EOT(~9Aring) has been achieved. HfTaTiO dielectric shows higher crystallization temperature (900degC), reduced hysteresis, 50% higher mobility and improved Vth instability than HfO2. Moreover, HfTaTiO exhibits excellent SILC and breakdown characteristics

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63rd Device Research Conference Digest, 2005. DRC '05.

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