{"title":"900mhz频率合成器,集成LC压控振荡器","authors":"A. Ali, Joo Leong Tham","doi":"10.1109/ISSCC.1996.488730","DOIUrl":null,"url":null,"abstract":"Integration of general-purpose frequency synthesizers usually requires a BiCMOS process and necessitates a compromise between the level of integration and performance. Frequency synthesizers with extensive channel programming flexibility and low phase noise typically require external voltage-controlled oscillators (VCOs) while highly-integrated synthesizers utilizing on-chip VCOs tend to exhibit degraded phase-noise performance. The frequency synthesizer presented here features low reference spurs and low phase-noise and is fully-integrated with the exception of an external crystal and an RC loop-filter. It uses a 25 GHz f/sub /spl tau// silicon bipolar process and is for 900 MHz ISM band applications and operates over a supply voltage range of 2.7 V to 5.0 V. The integration level is achieved by a simplified pulse-swallow architecture that provides 41 channels with a 600 kHz spacing and requires a 6 bit programming word.","PeriodicalId":162539,"journal":{"name":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"A 900 MHz frequency synthesizer with integrated LC voltage-controlled oscillator\",\"authors\":\"A. Ali, Joo Leong Tham\",\"doi\":\"10.1109/ISSCC.1996.488730\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Integration of general-purpose frequency synthesizers usually requires a BiCMOS process and necessitates a compromise between the level of integration and performance. Frequency synthesizers with extensive channel programming flexibility and low phase noise typically require external voltage-controlled oscillators (VCOs) while highly-integrated synthesizers utilizing on-chip VCOs tend to exhibit degraded phase-noise performance. The frequency synthesizer presented here features low reference spurs and low phase-noise and is fully-integrated with the exception of an external crystal and an RC loop-filter. It uses a 25 GHz f/sub /spl tau// silicon bipolar process and is for 900 MHz ISM band applications and operates over a supply voltage range of 2.7 V to 5.0 V. The integration level is achieved by a simplified pulse-swallow architecture that provides 41 channels with a 600 kHz spacing and requires a 6 bit programming word.\",\"PeriodicalId\":162539,\"journal\":{\"name\":\"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-02-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1996.488730\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1996.488730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 900 MHz frequency synthesizer with integrated LC voltage-controlled oscillator
Integration of general-purpose frequency synthesizers usually requires a BiCMOS process and necessitates a compromise between the level of integration and performance. Frequency synthesizers with extensive channel programming flexibility and low phase noise typically require external voltage-controlled oscillators (VCOs) while highly-integrated synthesizers utilizing on-chip VCOs tend to exhibit degraded phase-noise performance. The frequency synthesizer presented here features low reference spurs and low phase-noise and is fully-integrated with the exception of an external crystal and an RC loop-filter. It uses a 25 GHz f/sub /spl tau// silicon bipolar process and is for 900 MHz ISM band applications and operates over a supply voltage range of 2.7 V to 5.0 V. The integration level is achieved by a simplified pulse-swallow architecture that provides 41 channels with a 600 kHz spacing and requires a 6 bit programming word.