后端线兼容无退火铁电场效应晶体管

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Pub Date : 2023-03-07 DOI:10.1109/EDTM55494.2023.10103049

Shih-Hao Tsai, Zhonghua Li, Ma Mo Mo Ei Phyu, Zihang Fang, S. Hooda, Chun-Kuei Chen, E. Zamburg, A. Thean

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引用次数: 0

摘要

在这项工作中，我们开发了一种适用于内存计算的铁电氧化铪锆(HZO)/氧化铟镓锌(IGZO)基铁电场效应晶体管(FeFET)的免退火后端线(BEOL)工艺。在这项工作中提出的新型无退火BEOL FeFET在创纪录的低热预算下取得了具有竞争力的性能。超低亚阈值摆幅(SS)为66.2 mV/dec，大开/关电流比$(\mathrm{I}_{\text{on}}/\mathrm{I}_{\text{off}})$($> 10^{7}$)$，大内存窗口(MW) $> 1.7$ V，高续航时间$> 10^{7}$，且无明显退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Back-End-of-Line-Compatible Anneal-Free Ferroelectric Field-Effect Transistor

In this work, we develop an anneal-free back-end-of-line (BEOL) process for ferroelectric hafnium zirconium oxide (HZO)/indium gallium zinc oxide (IGZO)-based ferroelectric field-effect transistor (FeFET), suitable for in-memory computing. The novel anneal-free BEOL FeFET presented in this work stunningly achieves a competitive performance under a record-low thermal budget. Ultra-low subthreshold swing (SS) of 66.2 mV/dec, large on/off current ratio $(\mathrm{I}_{\text{ON}}/\mathrm{I}_{\text{OFF}})$ of $> 10^{7}$, large memory window (MW) of $> 1.7$ V, high endurance of $> 10^{7}$ cycles without significant degradation are obtained.

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来源期刊

2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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