{"title":"技术缩放对射频CMOS的影响","authors":"Hassan Hassan, M. Anis, M. Elmasry","doi":"10.1109/SOCC.2004.1362363","DOIUrl":null,"url":null,"abstract":"Inspired by the huge improvement in the RF properties of CMOS, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of the CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects, is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Using the BSIM4 model it is found that future CMOS technologies have high prospects in the RF industry.","PeriodicalId":184894,"journal":{"name":"IEEE International SOC Conference, 2004. Proceedings.","volume":"58 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Impact of technology scaling on RF CMOS\",\"authors\":\"Hassan Hassan, M. Anis, M. Elmasry\",\"doi\":\"10.1109/SOCC.2004.1362363\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Inspired by the huge improvement in the RF properties of CMOS, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of the CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects, is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Using the BSIM4 model it is found that future CMOS technologies have high prospects in the RF industry.\",\"PeriodicalId\":184894,\"journal\":{\"name\":\"IEEE International SOC Conference, 2004. Proceedings.\",\"volume\":\"58 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International SOC Conference, 2004. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCC.2004.1362363\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International SOC Conference, 2004. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2004.1362363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inspired by the huge improvement in the RF properties of CMOS, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of the CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects, is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Using the BSIM4 model it is found that future CMOS technologies have high prospects in the RF industry.