质量传感器用Mg/sub -x/ Zn/sub - 1-x/O薄膜谐振器的研究

Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005. Pub Date : 2005-08-31 DOI:10.1109/FREQ.2005.1573916

Y. Chen, G. Saraf, R. Wittstruck, N. Emanetoglu, Y. Lu

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引用次数: 6

摘要

氧化锌(ZnO)及其三元合金氧化锌镁(Mg xZn1-xO)是用于高质量因数体声波(BAW)谐振器的压电材料。基于Si衬底的MgxZn1-xO薄膜BAW器件对于将压电MgxZn1-xO与主流半导体器件和电路集成在一起尤其具有吸引力。本文报道了一种基于Si衬底的MgxZn1-xO单模薄膜谐振器(TFRs)。由四分之一波长二氧化硅(SiO2)和钨(W)层交替组成的声反射镜用于将谐振器与硅衬底隔离开来。采用射频溅射技术在Si衬底上沉积了高质量且c轴取向良好的MgxZn1-xO薄膜。利用x射线衍射(XRD)和场发射电镜(FESEM)对MgxZn1-xO层进行了表征。在传输线模型的基础上，对TFR进行了理论分析。通过改变膜中Mg的组成，可以调整膜的BAW速度和有效耦合系数。声速随Mg成分的增加而增大。分析了采用该结构构建超高灵敏度大质量BAW TFR传感器的可行性。质量灵敏度高于103 Hz cm2/ng

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Studies on Mg/sub x/Zn/sub 1-x/O thin film resonator for mass sensor application

Zinc oxide (ZnO) and its ternary alloy magnesium zinc oxide (Mg _xZn_1-xO) are piezoelectric materials for high quality factor bulk acoustic wave (BAW) resonators operating at GHz frequencies. Mg_xZn_1-xO thin film BAW devices built on Si substrates are particularly attractive for integrating piezoelectric Mg_xZn_1-xO with the main stream semiconductor devices and circuits. In this paper, we report single-mode Mg_xZn_1-xO based thin film resonators (TFRs) built on Si substrates. An acoustic mirror, composed of alternating quarter-wavelength silicon dioxide (SiO₂) and tungsten (W) layers, is used to isolate the resonator from the Si substrate. High quality and well c-axis oriented Mg_xZn_1-xO thin films are deposited on Si substrates using RF sputtering technology. X-ray diffraction (XRD) and field emission electron microscopy (FESEM) are used to characterize the Mg_xZn_1-xO layers. The theoretical analysis of the TFR, based on the transmission line model, is presented. The BAW velocity and effective coupling coefficient of Mg _xZn_1-xO can be tailored by varying the Mg composition in the films. The acoustic velocity increases with increasing Mg composition. The feasibility to use this structure to build ultra-high-sensitive mass BAW TFR sensor is analyzed. A mass sensitivity higher than 103 Hz cm₂/ng is demonstrated

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Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.

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