含纯锗应变量子阱的SiGe异质结构的结构和电学特性

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO) Pub Date : 2013-04-16 DOI:10.1109/ELNANO.2013.6552021

A. H. A. Hassan, O. Mironov, A. Dobbie, J. H. Morris, S. Gabáni, A. Feher, E. Čižmár, V. Andrievskii, I. Berkutov

{"title":"含纯锗应变量子阱的SiGe异质结构的结构和电学特性","authors":"A. H. A. Hassan, O. Mironov, A. Dobbie, J. H. Morris, S. Gabáni, A. Feher, E. Čižmár, V. Andrievskii, I. Berkutov","doi":"10.1109/ELNANO.2013.6552021","DOIUrl":null,"url":null,"abstract":"In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures. An extremely high hole mobility has observed, along with the lowest value of effective mass to date, using Schubnikov de Haas oscillations for both normal and inverted structures. The channel is confirmed to be pure germanium, with low background impurity scattering that improves the hole transport.","PeriodicalId":443634,"journal":{"name":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well\",\"authors\":\"A. H. A. Hassan, O. Mironov, A. Dobbie, J. H. Morris, S. Gabáni, A. Feher, E. Čižmár, V. Andrievskii, I. Berkutov\",\"doi\":\"10.1109/ELNANO.2013.6552021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures. An extremely high hole mobility has observed, along with the lowest value of effective mass to date, using Schubnikov de Haas oscillations for both normal and inverted structures. The channel is confirmed to be pure germanium, with low background impurity scattering that improves the hole transport.\",\"PeriodicalId\":443634,\"journal\":{\"name\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELNANO.2013.6552021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2013.6552021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了应变锗异质结构中二维空穴气体的结构表征和磁输运性质。利用Schubnikov - de - Haas振荡对正常结构和倒转结构都观察到极高的空穴迁移率，以及迄今为止最低的有效质量值。该通道被证实为纯锗，具有低背景杂质散射，改善了空穴输运。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Structural and electrical characterization of SiGe heterostructures containing a pure Ge strained quantum well

In this paper we present structural characterization and magneto-transport properties of the two dimensional hole gas in strained germanium heterostructures. An extremely high hole mobility has observed, along with the lowest value of effective mass to date, using Schubnikov de Haas oscillations for both normal and inverted structures. The channel is confirmed to be pure germanium, with low background impurity scattering that improves the hole transport.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE XXXIII International Scientific Conference Electronics and Nanotechnology (ELNANO)

自引率

0.00%

发文量