基于bist的嵌入式DRAM位失败映射

Brian R. Kessler, J. Dreibelbis, Tim McMahon, Joshua S. McCloy, R. Kho
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引用次数: 1

摘要

片上系统(SOC)半导体设计和制造的趋势使许多成熟的测试过程变得复杂。像DRAM存储器这样的电路,已经在专门的存储器测试器上使用复杂的测试程序和模式测试了几十年,可能不再能用这种既定的方法进行测试。测试和诊断嵌入式DRAM (eDRAM)存储器在SOC模型中的重要性不亚于离散DRAM模型。在本文中,我们描述和评估了一种基于位故障图的eDRAM诊断技术,并证明了物理故障分析(PFA)的成功。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BIST-based bitfail mapping of an embedded DRAM
Trends in system-on-a-chip (SOC) semiconductor design and fabrication have complicated many well-established test processes. Circuits such as DRAM memories, which have been tested for decades on dedicated memory testers, using sophisticated test programs and patterns, may no longer be testable with such established methodologies. Testing and diagnosing embedded DRAM (eDRAM) memories is no less important in an SOC model than it was in a discrete DRAM model. In this paper we describe and evaluate a technique for doing bitfail-map-based diagnostics of an eDRAM, and demonstrate success in physical failure analysis (PFA).
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