利用写噪声余量的正态分布,可以很容易地预测SRAM的写产率

H. Makino, S. Nakata, Hirotsugu Suzuki, S. Mutoh, M. Miyama, T. Yoshimura, S. Iwade, Y. Matsuda
{"title":"利用写噪声余量的正态分布,可以很容易地预测SRAM的写产率","authors":"H. Makino, S. Nakata, Hirotsugu Suzuki, S. Mutoh, M. Miyama, T. Yoshimura, S. Iwade, Y. Matsuda","doi":"10.1049/iet-cds.2012.0090","DOIUrl":null,"url":null,"abstract":"This study describes a method to easily predict the write yield of a static random access memory (SRAM) memory cell. The differential coefficient of the combined word line margin (CWLM) for the threshold voltage ( V th ) is analysed using the simple Schockley's transistor model. The analysis shows the good linearity comes from keeping the access transistor operating in the saturation mode for a wide range of V th 's. The Monte Carlo simulation demonstrates that the CWLM obeys the normal distribution. The mean and the variance of the CWLM are almost constant for sample numbers ranging from 100 to 100'000. The estimated write failure probability are almost uniform within a factor of 1.7 for the number of samples more than 300, which allows us to evaluate SRAM with a small number of measurements. The predicted distribution using the differential coefficient calculated by the SPICE simulation also matches the Monte Carlo results. The estimated write failure probability agrees with the Monte Carlo results within a factor of 2.0, which is acceptable for SRAM redundancy circuit design. Finally, the write yield is related to the error rate. Thus, the write yield is easily predicted from a small number of measured samples or the differential coefficients of the CWLM on the V th 's calculated by the SPICE simulation.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Utilising the normal distribution of the write noise margin to easily predict the SRAM write yield\",\"authors\":\"H. Makino, S. Nakata, Hirotsugu Suzuki, S. Mutoh, M. Miyama, T. Yoshimura, S. Iwade, Y. Matsuda\",\"doi\":\"10.1049/iet-cds.2012.0090\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study describes a method to easily predict the write yield of a static random access memory (SRAM) memory cell. The differential coefficient of the combined word line margin (CWLM) for the threshold voltage ( V th ) is analysed using the simple Schockley's transistor model. The analysis shows the good linearity comes from keeping the access transistor operating in the saturation mode for a wide range of V th 's. The Monte Carlo simulation demonstrates that the CWLM obeys the normal distribution. The mean and the variance of the CWLM are almost constant for sample numbers ranging from 100 to 100'000. The estimated write failure probability are almost uniform within a factor of 1.7 for the number of samples more than 300, which allows us to evaluate SRAM with a small number of measurements. The predicted distribution using the differential coefficient calculated by the SPICE simulation also matches the Monte Carlo results. The estimated write failure probability agrees with the Monte Carlo results within a factor of 2.0, which is acceptable for SRAM redundancy circuit design. Finally, the write yield is related to the error rate. Thus, the write yield is easily predicted from a small number of measured samples or the differential coefficients of the CWLM on the V th 's calculated by the SPICE simulation.\",\"PeriodicalId\":120076,\"journal\":{\"name\":\"IET Circuits Devices Syst.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IET Circuits Devices Syst.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/iet-cds.2012.0090\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/iet-cds.2012.0090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

本研究描述一种简单预测静态随机存取记忆体(SRAM)记忆体写产率的方法。利用简单的肖克利晶体管模型,分析了阈值电压V th的组合字线边界(CWLM)的微分系数。分析表明,良好的线性度来自于在大V - s范围内保持接入晶体管工作在饱和模式。蒙特卡罗仿真表明,CWLM服从正态分布。CWLM的均值和方差在100到100000的样本数范围内几乎是恒定的。对于超过300个样本的数量,估计的写入失败概率几乎在1.7因子内是一致的,这允许我们使用少量的测量来评估SRAM。利用SPICE模拟计算的微分系数预测的分布也与蒙特卡罗结果相吻合。估计的写入失败概率与蒙特卡罗结果在2.0因子内一致,这对于SRAM冗余电路设计是可以接受的。最后,写产量与错误率有关。因此,写入产率很容易从少量测量样本或通过SPICE模拟计算的CWLM在V上的微分系数中预测出来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Utilising the normal distribution of the write noise margin to easily predict the SRAM write yield
This study describes a method to easily predict the write yield of a static random access memory (SRAM) memory cell. The differential coefficient of the combined word line margin (CWLM) for the threshold voltage ( V th ) is analysed using the simple Schockley's transistor model. The analysis shows the good linearity comes from keeping the access transistor operating in the saturation mode for a wide range of V th 's. The Monte Carlo simulation demonstrates that the CWLM obeys the normal distribution. The mean and the variance of the CWLM are almost constant for sample numbers ranging from 100 to 100'000. The estimated write failure probability are almost uniform within a factor of 1.7 for the number of samples more than 300, which allows us to evaluate SRAM with a small number of measurements. The predicted distribution using the differential coefficient calculated by the SPICE simulation also matches the Monte Carlo results. The estimated write failure probability agrees with the Monte Carlo results within a factor of 2.0, which is acceptable for SRAM redundancy circuit design. Finally, the write yield is related to the error rate. Thus, the write yield is easily predicted from a small number of measured samples or the differential coefficients of the CWLM on the V th 's calculated by the SPICE simulation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信