自定时SRAM鲁棒性的变异性分析

F. Burns, A. Baz, D. Shang, A. Yakovlev
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引用次数: 1

摘要

本文主要研究自定时SRAM对随机过程变化的鲁棒性。本文增强了我们之前提出的电路级方法,该方法提供了对易死锁的信号的鲁棒性,并使用晶体管级的分析技术来分析SRAM存储单元内晶体管的工艺参数的影响。这是通过使用变异性分析工具VARMA来完成的,该工具有助于分析过程参数变化的鲁棒性。我们增强了VARMA工具,使用有效的多分区表面响应与后端蒙特卡罗模拟来分析问题。结果提供了一个比其他方法更快的洞察变化过程对电路的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Variability analysis of self-timed SRAM robustness
This paper focusses on variability analysis for analyzing the robustness of self-timed SRAM to random process variations. The paper augments our previously proposed approaches at the circuit level which provide robustness against signals that are susceptible to deadlock with analysis techniques at the transistor level to analyze the effect of the process parameters for the transistors inside the SRAM memory cells. This has been accomplished by employing a variability analysis tool, VARMA, which facilitates the job of analyzing the robustness to variation of process parameters. We have augmented the VARMA tool to use efficient multi-partitioned surface response with back-end Monte Carlo simulation to analyse the problem. The results provide a faster insight than other approaches into the effect of variation processes on circuits.
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