Yanping Zhou, Guochi Huang, Sangwook Nam, Byung-sung Kim
{"title":"一种新型宽带包络探测器","authors":"Yanping Zhou, Guochi Huang, Sangwook Nam, Byung-sung Kim","doi":"10.1109/RFIC.2008.4561422","DOIUrl":null,"url":null,"abstract":"In this paper, we present a novel wide-band envelope detector comprising a fully-differential operational transconductance amplifier (OTA), a full-wave rectifier and a peak detector. To enhance the frequency performance of the envelop detector, we utilize a gyrator-C active inductor load in the OTA for wider bandwidth. Additionally, it is shown that the high-speed rectifier of the envelope detector requires high bias current instead of the sub-threshold bias condition. The experimental results show that the proposed envelope detector can work from 100-Hz to 1.6-GHz with an input dynamic range of 50-dB at 100-Hz and 40-dB at 1.6-GHz, respectively. The envelope detector was fabricated on the TSMC 0.18-um CMOS process with an active area of 0.652 mm2.","PeriodicalId":253375,"journal":{"name":"2008 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A novel wide-band envelope detector\",\"authors\":\"Yanping Zhou, Guochi Huang, Sangwook Nam, Byung-sung Kim\",\"doi\":\"10.1109/RFIC.2008.4561422\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a novel wide-band envelope detector comprising a fully-differential operational transconductance amplifier (OTA), a full-wave rectifier and a peak detector. To enhance the frequency performance of the envelop detector, we utilize a gyrator-C active inductor load in the OTA for wider bandwidth. Additionally, it is shown that the high-speed rectifier of the envelope detector requires high bias current instead of the sub-threshold bias condition. The experimental results show that the proposed envelope detector can work from 100-Hz to 1.6-GHz with an input dynamic range of 50-dB at 100-Hz and 40-dB at 1.6-GHz, respectively. The envelope detector was fabricated on the TSMC 0.18-um CMOS process with an active area of 0.652 mm2.\",\"PeriodicalId\":253375,\"journal\":{\"name\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2008.4561422\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2008.4561422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, we present a novel wide-band envelope detector comprising a fully-differential operational transconductance amplifier (OTA), a full-wave rectifier and a peak detector. To enhance the frequency performance of the envelop detector, we utilize a gyrator-C active inductor load in the OTA for wider bandwidth. Additionally, it is shown that the high-speed rectifier of the envelope detector requires high bias current instead of the sub-threshold bias condition. The experimental results show that the proposed envelope detector can work from 100-Hz to 1.6-GHz with an input dynamic range of 50-dB at 100-Hz and 40-dB at 1.6-GHz, respectively. The envelope detector was fabricated on the TSMC 0.18-um CMOS process with an active area of 0.652 mm2.