FDSOI技术中ESD二极管的热特性

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) Pub Date : 2018-06-01 DOI:10.1109/EDSSC.2018.8487095

Zhaonian Yang, N. Yu, J. Liou

{"title":"FDSOI技术中ESD二极管的热特性","authors":"Zhaonian Yang, N. Yu, J. Liou","doi":"10.1109/EDSSC.2018.8487095","DOIUrl":null,"url":null,"abstract":"Electrostatic discharge (ESD) protection is very important for integrated circuits. In the fully depleted silicon on insulator (FDSOI) technology, the buried oxide (BOX) caused thermal degradation is one of the factors that degrade the intrinsic ESD robustness. In this work, the thermal characteristic of FDSOI ESD diode is investigated by TCAD simulations. The results show that the reduction in BOX thickness and material optimization can improve the heat dissipation and device’s ESD performance.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermal Characteristics of ESD Diode in FDSOI Technologies\",\"authors\":\"Zhaonian Yang, N. Yu, J. Liou\",\"doi\":\"10.1109/EDSSC.2018.8487095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrostatic discharge (ESD) protection is very important for integrated circuits. In the fully depleted silicon on insulator (FDSOI) technology, the buried oxide (BOX) caused thermal degradation is one of the factors that degrade the intrinsic ESD robustness. In this work, the thermal characteristic of FDSOI ESD diode is investigated by TCAD simulations. The results show that the reduction in BOX thickness and material optimization can improve the heat dissipation and device’s ESD performance.\",\"PeriodicalId\":279745,\"journal\":{\"name\":\"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2018.8487095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2018.8487095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

静电放电(ESD)保护对于集成电路来说是非常重要的。在完全耗尽绝缘体上硅(FDSOI)技术中，埋藏氧化物(BOX)引起的热降解是降低固有ESD稳健性的因素之一。本文通过TCAD仿真研究了FDSOI型ESD二极管的热特性。结果表明，减小BOX厚度和优化材料可以改善器件的散热和ESD性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Thermal Characteristics of ESD Diode in FDSOI Technologies

Electrostatic discharge (ESD) protection is very important for integrated circuits. In the fully depleted silicon on insulator (FDSOI) technology, the buried oxide (BOX) caused thermal degradation is one of the factors that degrade the intrinsic ESD robustness. In this work, the thermal characteristic of FDSOI ESD diode is investigated by TCAD simulations. The results show that the reduction in BOX thickness and material optimization can improve the heat dissipation and device’s ESD performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)

自引率

0.00%

发文量