{"title":"二维效应下SiGe MOSFET阈值电压的解析建模","authors":"R. Mahajan, D. Gautam","doi":"10.1109/I2CT.2014.7092218","DOIUrl":null,"url":null,"abstract":"Dynamics of threshold voltage for pseudomorphic SiGe structure is presented in this paper. Poisson's equation has been solved analytically considering short channel effects. Simulation obtained from analytical are in good agreement with the results from Silvaco TCAD. Validation of model for specific range of substrate concentration has been done. Analytical model developed can be extended for the use of high-k material structure as well. This work presenting as a compact solution for high-k SiGe MOSFET structure.","PeriodicalId":384966,"journal":{"name":"International Conference for Convergence for Technology-2014","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Analytical modeling of threshold voltage for SiGe MOSFET with two dimensional effects\",\"authors\":\"R. Mahajan, D. Gautam\",\"doi\":\"10.1109/I2CT.2014.7092218\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Dynamics of threshold voltage for pseudomorphic SiGe structure is presented in this paper. Poisson's equation has been solved analytically considering short channel effects. Simulation obtained from analytical are in good agreement with the results from Silvaco TCAD. Validation of model for specific range of substrate concentration has been done. Analytical model developed can be extended for the use of high-k material structure as well. This work presenting as a compact solution for high-k SiGe MOSFET structure.\",\"PeriodicalId\":384966,\"journal\":{\"name\":\"International Conference for Convergence for Technology-2014\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference for Convergence for Technology-2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/I2CT.2014.7092218\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference for Convergence for Technology-2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/I2CT.2014.7092218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analytical modeling of threshold voltage for SiGe MOSFET with two dimensional effects
Dynamics of threshold voltage for pseudomorphic SiGe structure is presented in this paper. Poisson's equation has been solved analytically considering short channel effects. Simulation obtained from analytical are in good agreement with the results from Silvaco TCAD. Validation of model for specific range of substrate concentration has been done. Analytical model developed can be extended for the use of high-k material structure as well. This work presenting as a compact solution for high-k SiGe MOSFET structure.
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