脉冲激光两步辐照法在YSZ晶化感应层上生长的未掺杂和掺杂多si薄膜电导率的温度依赖性

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2015-07-01 DOI:10.1109/AM-FPD.2015.7173249

Mai Lien Thi Kieu, S. Horita

{"title":"脉冲激光两步辐照法在YSZ晶化感应层上生长的未掺杂和掺杂多si薄膜电导率的温度依赖性","authors":"Mai Lien Thi Kieu, S. Horita","doi":"10.1109/AM-FPD.2015.7173249","DOIUrl":null,"url":null,"abstract":"Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.","PeriodicalId":243757,"journal":{"name":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser\",\"authors\":\"Mai Lien Thi Kieu, S. Horita\",\"doi\":\"10.1109/AM-FPD.2015.7173249\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.\",\"PeriodicalId\":243757,\"journal\":{\"name\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"144 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2015.7173249\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2015.7173249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

用脉冲激光两步法研究了有/没有YSZ层的硅薄膜固相结晶的电导率。用交流霍尔效应测量方法测量了未掺杂和掺p薄膜的温度依赖性。结果表明，Si/YSZ/玻璃结构的电导率高于Si/玻璃结构。这表明在YSZ层上结晶的Si膜比在玻璃上结晶的Si膜更适合于电子器件的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser

Conductivities of Si thin films crystallized in solid phase with/without YSZ layers by the two-step method with pulsed laser were investigated. The temperature dependences were also measured for both undoped and P-doped films using AC Hall effect measurement. It was found that the Si/YSZ/glass structure exhibited higher conductivities than those of the Si/glass. This suggested that the Si film crystallized on the YSZ layer is more suitable for application of electronic devices, compared with the Si film on glass.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

自引率

0.00%

发文量