用金刚石管理热量:金刚石/GaN hemt的例子

J. Mendes, M. Liehr
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引用次数: 0

摘要

金刚石是最理想的热管理材料。它的高击穿电场和导热性,加上人造金刚石片的可用性以及在非金刚石衬底上生长这种材料的可能性,推动了热管理最重要的应用研究。这就是氮化镓(GaN)高电子迁移率晶体管(hemt)的情况。基于gan -on - diamond晶圆的功率放大器已经商业化,证明了集成金刚石和功率元件的潜力和可行性。这项工作描述了可用于将金刚石和氮化镓集成到具有更高功率能力的混合器件中的不同方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Managing Heat with Diamond: the Example of Diamond/GaN HEMTs
Diamond is the ultimate thermal management material. Its high breakdown electric field and thermal conductivity, together with the availability of artificial diamond plates and the possibility of growing this material on non-diamond substrates have fueled research in applications where thermal management is of utmost importance. This is the case of gallium nitride (GaN) high electron mobility transistors (HEMTs). Power amplifiers based on GaN-ondiamond wafers are already commercially available, attesting the potential and feasibility of integrating diamond and power components. This work describes the different approaches that can be used to integrate diamond and GaN in hybrid devices with increased power capability.
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