可选的耐辐射高性能存储器

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-02 DOI:10.1109/RADECS.2017.8696197

S. Guertin, J. Yang-Scharlotta, Paris Blaisdell-Pijuan, R. Some

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引用次数: 1

摘要

对存储器技术的辐射效应性能进行了审查，以便为可能的存储器投资确定最具成本效益的目标，目标是创造一种普遍适用于空间使用的存储器组件。表明基于缩放的内在性能改善的TID和SEL趋势是不可信的。存储阵列的SEE硬化在单元级功率和面积要求方面是令人望而却步的。建议在未来的内存开发中使用抗辐射的单元和自定义控制器。

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Options for Radiation Tolerant High-Performance Memory

Memory technologies were reviewed for radiation effects performance in order to determine the most cost-efficient target for a possible memory investment targeted at creating a memory component of general applicability for space use. TID and SEL trends that had indicated improvement in intrinsic performance based on scaling cannot be trusted. SEE hardening of memory arrays is prohibitive in terms of cell-level power and area requirements. Radiation-hardened cells and custom controllers are recommended for future memory developments.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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