综合研究基于siox的本征单极ReRAM在交流频率响应和低电压(< 2V)工作中的特性

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480497

Ying‐Chen Chen, Yao‐Feng Chang, B. Fowler, F. Zhou, Xiaohan Wu, C. Hsieh, H. Chang, Chih-Hung Pan, Min-Chen Chen, Kuan‐Chang Chang, T. Tsai, T. Chang, Jack C. Lee

{"title":"综合研究基于siox的本征单极ReRAM在交流频率响应和低电压(< 2V)工作中的特性","authors":"Ying‐Chen Chen, Yao‐Feng Chang, B. Fowler, F. Zhou, Xiaohan Wu, C. Hsieh, H. Chang, Chih-Hung Pan, Min-Chen Chen, Kuan‐Chang Chang, T. Tsai, T. Chang, Jack C. Lee","doi":"10.1109/VLSI-TSA.2016.7480497","DOIUrl":null,"url":null,"abstract":"Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (<; 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.","PeriodicalId":441941,"journal":{"name":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation\",\"authors\":\"Ying‐Chen Chen, Yao‐Feng Chang, B. Fowler, F. Zhou, Xiaohan Wu, C. Hsieh, H. Chang, Chih-Hung Pan, Min-Chen Chen, Kuan‐Chang Chang, T. Tsai, T. Chang, Jack C. Lee\",\"doi\":\"10.1109/VLSI-TSA.2016.7480497\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (<; 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.\",\"PeriodicalId\":441941,\"journal\":{\"name\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2016.7480497\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2016.7480497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本征单极siox基电阻式ram (ReRAM)的特性进行了研究。通过改变器件面积、温度和电流状态，研究了交叉杆MIM结构在交流频率响应下的性能。该结果为跳/切换机制提供了额外的见解。我们首次利用SiOx/HfOx堆叠工程，开发了一种低压操作(<;2V)用于基于siox的ReRAM。SiOx/HfOx叠加优化不仅在空气环境中保持了RS行为，而且没有任何编程窗口退化，而且进一步将开关电压降低到2V以下。

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Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage (< 2V) operation

Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (<; 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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