硅化栅极MOSFET的氧化物漏电流机理

22nd International Reliability Physics Symposium Pub Date : 1984-04-01 DOI:10.1109/IRPS.1984.362044

T. Watanabe, H. Ishiuchi, T. Tanaka, T. Mochizuki, O. Ozawa

{"title":"硅化栅极MOSFET的氧化物漏电流机理","authors":"T. Watanabe, H. Ishiuchi, T. Tanaka, T. Mochizuki, O. Ozawa","doi":"10.1109/IRPS.1984.362044","DOIUrl":null,"url":null,"abstract":"Oxide leakage currents of silicide gate MOSFET's have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mechanism of Oxide Leakage Current of Silicide Gate MOSFET's\",\"authors\":\"T. Watanabe, H. Ishiuchi, T. Tanaka, T. Mochizuki, O. Ozawa\",\"doi\":\"10.1109/IRPS.1984.362044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Oxide leakage currents of silicide gate MOSFET's have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了硅化栅极MOSFET的氧化物泄漏电流。结果表明，尽管正栅偏压下存在合理的Fowler-Nordheim电流，但在负栅偏压下仍存在较大的氧化物泄漏电流。界面硅化钼的粗糙性引起的局部电场增强很好地解释了实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Mechanism of Oxide Leakage Current of Silicide Gate MOSFET's

Oxide leakage currents of silicide gate MOSFET's have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

22nd International Reliability Physics Symposium

自引率

0.00%

发文量