F. Allibert, N. Bresson, K. Bellatreche, C. Maunand-Tussot, S. Cristoloveanu
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Electrical characterization of ultra-thin SOI films: comparison of the pseudo-MOSFET and Hg-FET techniques
As the MOSFETs dimensions are scaled down, following the ITRS roadmap, the need for SOI wafers with ultra-thin Si films (UTF) becomes acute. Characterization of these wafers with simple, process-independent, and fast turnaround methods is very important. In this paper, we present for the first time 3 key aspects: (i) properties of UTF down to 10 nm thickness; (ii) comparison of thinning techniques (sacrificial oxidation vs. SCI); and (iii) comparison of pseudo-MOSFET and Hg-FET methods for UTF.
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