采用高q布局优化电感的2.5 GHz折叠级联LNA噪声系数分析

Shashank Tiwari, V. Vanukuru, J. Mukherjee
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引用次数: 13

摘要

在不同的直流功耗下,研究了电感质量因子Q对折叠级联低噪声放大器噪声系数NF的影响。在较低的功率水平下,电感Q对总体噪声系数的贡献较小。具有较低Q值的面积优化电感可以用于这种设计。然而,对于更高的功率水平,可实现的NF较低,并且受电感Q的显着影响。结果表明,优化布局后的高q电感可以进一步降低10%以上的NF。采用0.18 μm RF SOI工艺设计和仿真的2.5 GHz LNA具有1.4 dB的NF,功耗为2.5 mW,输入和输出的回波损耗均优于30 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Noise figure analysis of 2.5 GHz folded cascode LNA using high-Q layout optimized inductors
The effect of inductor quality factor (Q) on the noise figure (NF) of a folded cascode low noise amplifier (LNA) is thoroughly studied for different values of DC power consumption. At lower power levels, the contribution of inductor Q towards the overall noise figure is shown to be less. Area optimized inductors with lower Q values can be used in such designs. However, for higher power levels, achievable NF is lower and is significantly affected by the Q of inductors. It is shown that layout optimized high-Q inductors can further reduce the NF by more than 10%. A 2.5 GHz LNA designed and simulated using 0.18 μm RF SOI process is shown to exhibit 1.4 dB NF while consuming 2.5 mW power with the return loss at the input and output better than 30 dB.
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