{"title":"采用高q布局优化电感的2.5 GHz折叠级联LNA噪声系数分析","authors":"Shashank Tiwari, V. Vanukuru, J. Mukherjee","doi":"10.1109/PRIMEASIA.2015.7450477","DOIUrl":null,"url":null,"abstract":"The effect of inductor quality factor (Q) on the noise figure (NF) of a folded cascode low noise amplifier (LNA) is thoroughly studied for different values of DC power consumption. At lower power levels, the contribution of inductor Q towards the overall noise figure is shown to be less. Area optimized inductors with lower Q values can be used in such designs. However, for higher power levels, achievable NF is lower and is significantly affected by the Q of inductors. It is shown that layout optimized high-Q inductors can further reduce the NF by more than 10%. A 2.5 GHz LNA designed and simulated using 0.18 μm RF SOI process is shown to exhibit 1.4 dB NF while consuming 2.5 mW power with the return loss at the input and output better than 30 dB.","PeriodicalId":137621,"journal":{"name":"2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Noise figure analysis of 2.5 GHz folded cascode LNA using high-Q layout optimized inductors\",\"authors\":\"Shashank Tiwari, V. Vanukuru, J. Mukherjee\",\"doi\":\"10.1109/PRIMEASIA.2015.7450477\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of inductor quality factor (Q) on the noise figure (NF) of a folded cascode low noise amplifier (LNA) is thoroughly studied for different values of DC power consumption. At lower power levels, the contribution of inductor Q towards the overall noise figure is shown to be less. Area optimized inductors with lower Q values can be used in such designs. However, for higher power levels, achievable NF is lower and is significantly affected by the Q of inductors. It is shown that layout optimized high-Q inductors can further reduce the NF by more than 10%. A 2.5 GHz LNA designed and simulated using 0.18 μm RF SOI process is shown to exhibit 1.4 dB NF while consuming 2.5 mW power with the return loss at the input and output better than 30 dB.\",\"PeriodicalId\":137621,\"journal\":{\"name\":\"2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PRIMEASIA.2015.7450477\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PRIMEASIA.2015.7450477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Noise figure analysis of 2.5 GHz folded cascode LNA using high-Q layout optimized inductors
The effect of inductor quality factor (Q) on the noise figure (NF) of a folded cascode low noise amplifier (LNA) is thoroughly studied for different values of DC power consumption. At lower power levels, the contribution of inductor Q towards the overall noise figure is shown to be less. Area optimized inductors with lower Q values can be used in such designs. However, for higher power levels, achievable NF is lower and is significantly affected by the Q of inductors. It is shown that layout optimized high-Q inductors can further reduce the NF by more than 10%. A 2.5 GHz LNA designed and simulated using 0.18 μm RF SOI process is shown to exhibit 1.4 dB NF while consuming 2.5 mW power with the return loss at the input and output better than 30 dB.