半导体过渡金属硅化物的物理性质及其在硅基器件中的应用前景

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785866

H. Lange

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引用次数: 1

摘要

半导体过渡金属硅化物是新型硅基器件的潜在候选物。综述了近年来对该类材料物理性质的研究进展，重点介绍了/spl β /-FeSi/sub 2/。概述了电子结构的特征特征。带间和红外光学性质与理论预测一致。只有植入/spl β /-FeSi/sub - 2/层可以观察到光发射。相应掺杂剂的掺入得到n型和p型材料。载流子与非极性光学和声学声子以及中性杂质的相互作用必须考虑在内。讨论了半导体硅化物存在的问题及应用前景。

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Physical properties of semiconducting transition metal silicides and their prospects in Si-based device applications

Semiconducting transition metal silicides are of interest as potential candidates for new Si-based devices. The recent advances obtained on the understanding of the physical properties of this group of materials are summarized with special emphasis on /spl beta/-FeSi/sub 2/. Characteristic features of the electronic structure are outlined. Interband and infrared optical properties are in good agreement with theoretical predictions. Light emission could be observed from implanted /spl beta/-FeSi/sub 2/ layers only. Incorporation of corresponding dopants gives n- and p-type material. Carrier interaction with nonpolar optical and acoustic phonons as well as neutral impurities has to be taken into account. The problems and prospects of application of semiconducting silicides are discussed.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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