超薄体GeSn隧道场效应晶体管后门偏置效应的理论研究

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309214

Hongjuan Wang, G. Han, Yan Liu, Jincheng Zhang, Y. Hao, Xiangwei Jiang

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引用次数: 3

摘要

通过数值模拟研究了后门偏置(KBS)对超薄体(UTB) GeSn homo-和GeSn/SiGeSn type-II异质tfet性能的影响。两种器件的起始电压(KONSET)均为负偏移，KBS从−1 V变化到1 V。与KBS≥0 V的器件相比，负KBS提供更高的导通电流(/ON)和更陡的亚阈值摆幅(SS)。这是由于负KBS引起的更高的载波产生率和更短的隧穿路径。在相同的后门偏置条件下，异质tfet的离子、SS和双极性特性得到了改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretical investigation of backgate-biasing effects on ultrathin-body GeSn based tunneling FET

The impacts of backgate-biasing (KBS) on the performance of ultrathin-body (UTB) GeSn homo- and GeSn/SiGeSn type-II hetero-TFET are investigated via numerical simulation. A negative shift of onset voltage (KONSET) is observed in both devices with KBS varying from −1 V to 1 V. Negative KBS provides higher on-state current (/ON) and steeper subthreshold swing (SS), as compared with the devices under Kbs ≥ 0 V. This is due to the higher carrier generation rate and shorter tunneling path induced by negative KBS. Under the same backgate-bias condition, improved ION, SS, and ambipolar characteristics are demonstrated in the hetero-TFETs over the homo devices.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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