金属沉积工艺对双大马士革铜互连可靠性的影响

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219701

K. Ishikawa, T. Iwasaki, T. Fujii, N. Nakajima, M. Miyauchi, T. Ohshima, J. Noguchi, H. Aoki, T. Saito

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引用次数: 11

摘要

本文讨论了TaN/Ta势垒与铜(Cu)之间的粘附强度对双damese Cu互连可靠性的影响以及阶梯覆盖的影响。将离子化金属偏压溅射(IMBS)方法应用于0.13 /spl mu/m节点双damascene Cu互连的TaN/Ta势垒和Cu种子形成，成功改善了电迁移和应力迁移特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of metal deposition process upon reliability of dual-damascene copper interconnects

In this paper, we discuss the effect of adhesion strength between TaN/Ta barrier and copper (Cu) upon the reliability of dual-damascene Cu interconnects as well as the effect of stepcoverage. The ionized metal bias sputtering (IMBS) method was applied to TaN/Ta barrier and Cu seed formation of 0.13 /spl mu/m-node dual-damascene Cu interconnects and the electromigration and stress migration characteristics were successfully improved.

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来源期刊

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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