用于5V能量管理应用的超薄FDSOI双地平面EDMOS

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948776

Antoine Litty, S. Ortolland, D. Golanski, S. Cristoloveanu

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引用次数: 9

摘要

实验证明了超薄体和埋藏氧化物完全耗尽SOI技术(UTBB-FDSOI)中有前途的高压MOSFET (HVMOS)。双地平面扩展漏极MOSFET (DGP EDMOS)架构使用后门偏置作为有效杠杆来优化高压性能。我们表明，两个地平面的分离偏置可以独立控制通道和漂移区域。电气特性，如特定导通电阻/击穿权衡作为后门电压和几何的函数进行了探讨。我们提出并讨论了用于能源管理的5V开关模式应用的令人鼓舞的结果。

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Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications

A promising high-voltage MOSFET (HVMOS) in Ultra-Thin Body and Buried oxide Fully Depleted SOI technology (UTBB-FDSOI) is experimentally demonstrated. The Dual Ground Plane Extended-Drain MOSFET (DGP EDMOS) architecture uses the back-gate biasing as an efficient lever to optimize high-voltage performances. We show that the separated biasing of the two ground planes enables independent control of the channel and drift regions. Electrical characteristics such as specific on-resistance/breakdown trade-off as a function of the back-gate voltage and geometry are explored. We present and discuss encouraging results for 5V switched mode applications for energy management.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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