成本驱动的3D设计优化与金属层减少技术

Qiaosha Zou, Jing Xie, Yuan Xie
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引用次数: 6

摘要

三维集成电路(3D IC)是一个很有前途的解决方案,以继续性能缩放。然而,3D集成电路的制造成本可能是采用这种新兴技术的主要问题。在本文中,我们研究了基于tsv和基于中间体的3D集成电路的成本含义,观察到许多2D设计中的长金属互连被3D设计中的tsv所取代,因此可以减少满足布线要求的金属层数,从而节省3D集成电路的成本。基于我们的成本模型,我们提出了一个成本驱动的3D设计空间优化流程,通过优化硅面积和金属层数之间的成本权衡,平衡设计面积和金属层需求。通过成本驱动的设计优化流程,与基线设计相比,基于tsv的3D设计可以节省19%的成本,基于interpoer的3D设计可以节省26%的成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cost-driven 3D design optimization with metal layer reduction technique
Three-dimensional integrated circuit (3D IC) is a promising solution to continue the performance scaling. However, the fabrication cost for 3D ICs can be a major concern for the adoption of this emerging technology. In this paper, we study the cost implication for both TSV-based and interposer-based 3D ICs, with the observation that many long metal interconnects in 2D designs are replaced by TSVs in 3D designs, and therefore the number of metal layers to satisfy routing requirements can be reduced, resulting in cost saving in 3D ICs. Based on our cost model, we propose a cost-driven 3D design space optimization flow that balances the design area and metal layer requirement, by optimizing the cost tradeoffs between silicon area and the number of metal layers. With the cost-driven design optimization flow, we can achieve cost saving up to 19% for TSV-based 3D designs, and 26% for interposer-based 3D designs, respectively, compared to the baseline designs.
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