ZnS: tof ACTFEL器件中不同绝缘体-荧光粉界面深度电子阱的研究

1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings Pub Date : 1996-10-09 DOI:10.1109/SMICND.1996.557413

C.W. Wang, T. Sheu, Y. Su, M. Yokoyama

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引用次数: 0

摘要

利用能量分辨DLTS测量绝缘体-半导体界面处的界面电子能量分布。结果表明:与SiO/sub 2//ZnS: tof相比，Ta/sub 2/O/sub 5//ZnS: tof具有更浅的界面态能量分布和更高的平均界面态密度;

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An investigation of deep electron trap at the different insulator-phosphor interfaces in ZnS:TbOF ACTFEL devices

Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta/sub 2/O/sub 5//ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO/sub 2//ZnS:TbOF.

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1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings

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