{"title":"cmos集成热电红外微传感器的设计与制造","authors":"K. Lin, Rongshun Chen","doi":"10.1109/OMEMS.2008.4607851","DOIUrl":null,"url":null,"abstract":"This work presents a thermoelectric infrared microsensor which is designed and fabricated with TSMC CMOS-MEMS processes. The proposed device can achieve the responsivity of 432.3 V/W and time constant of 2.49 ms at 1 atm.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Design and fabrication of CMOS-integrated thermoelectric IR microsensors\",\"authors\":\"K. Lin, Rongshun Chen\",\"doi\":\"10.1109/OMEMS.2008.4607851\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a thermoelectric infrared microsensor which is designed and fabricated with TSMC CMOS-MEMS processes. The proposed device can achieve the responsivity of 432.3 V/W and time constant of 2.49 ms at 1 atm.\",\"PeriodicalId\":402931,\"journal\":{\"name\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-08-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OMEMS.2008.4607851\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2008.4607851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and fabrication of CMOS-integrated thermoelectric IR microsensors
This work presents a thermoelectric infrared microsensor which is designed and fabricated with TSMC CMOS-MEMS processes. The proposed device can achieve the responsivity of 432.3 V/W and time constant of 2.49 ms at 1 atm.
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