通过微带径向短段的15W混合GaN功率放大器,用于x波段雷达应用

SriHarsha Vardhan G, Deepali Pathak, Manish Mendhe, A. Dutta
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引用次数: 2

摘要

雷达前端需要各种各样的功率放大器,这些放大器必须是小型的、高效的和经济的。采用微步长径向短段对输入输出匹配网络的高功率GaN功率放大器的优化设计,适用于覆盖8.5 GHz至9.5 GHz的x波段雷达应用。利用紧凑的4路分压器设计来开发15W功率放大器,采用微带技术,采用径向短段进行优化匹配。该系统在28V漏极电压下,以23dbm的输入驱动实现15W (43dbm)的输出功率,功率附加效率(PAE)为42%,增益为20db。采用Keysight ADS 2017,采用1.8 x 2.4 mm2的芯片尺寸,在UMS (GH25)的0.25µm栅长GaN on SiC工艺上完成了4W MMIC设计。通过在GaN GH25中设计4W MMIC和安装在印刷电路板上的功率分配器/组合器,所提出的15W功率放大器消耗面积为55 x 24 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
15W Hybrid GaN Power Amplifier through Microstrip Radial Stub 4W GaN MMIC for X-band Radar Applications
Radar Front-Ends crave diverse power amplifiers, which must be small-scaled, productive and economical. Our approach elaborate optimized Design of high power GaN power amplifier adopting microstirp radial stub in pair input and output matching network for an X-band Radar applications that overlay 8.5 GHz to 9.5 GHz.To develop 15W power amplifier utilizing a compact design of 4way power divider with proposed design was accomplished in microstrip technology adopting radial stub for the superior matching. The system achieves a 15W (43 dBm) output power from a 23 dBm input drive with a 42% Power Added Efficiency (PAE) and a 20 dB gain in CW−mode operation with a 28V drain voltage. The 4W MMIC design was completed on the 0.25µm gate length GaN on SiC process of UMS (GH25) using Keysight ADS 2017 with die size of 1.8 x 2.4 mm2. The proposed 15W power amplifier through a design of 4W MMIC in GaN GH25 and power divider/combiner mounted on printed circuit board consumes an area of 55 x 24 mm2.
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