采用米勒电容调谐的1.8/2.4 ghz双频cmos低噪声放大器

Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08) Pub Date : 2008-08-11 DOI:10.1145/1393921.1393997

Depak Balemarthy, R. Paily

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引用次数: 3

摘要

介绍了一种采用标准CMOS 0.18 μm TSMC工艺设计的感应源退化双带低噪声放大器(LNA)。双频LNA可调至1.8 ghz和2.4 ghz。通过米勒电容调谐，在所需频段获得阻抗匹配。所设计的LNA在1.8 ghz和2.4 ghz频段的增益分别为18.2dB和16.2dB，噪声系数分别为5.0dB和3.7dB。LNA设计是使用Mentor Graphics Eldo软件进行的。

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A 1.8/2.4-ghz dualband cmos low noise amplifier using miller capacitance tuning

This paper describes an inductively source degenerated dual-band low noise amplifier (LNA) designed in a standard CMOS 0.18 μm TSMC process. The dual-band LNA can be tuned to 1.8-GHz and 2.4-GHz. The impedance matching is obtained at the required frequency bands using Miller-capacitance tuning. The designed LNA exhibits a gain of 18.2dB and 16.2dB and a noise figure of 5.0dB and 3.7dB at 1.8 and 2.4-GHz respectively. The LNA design is carried out using Mentor Graphics Eldo software.

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Proceeding of the 13th international symposium on Low power electronics and design (ISLPED '08)

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