短波长发光二极管的设计

Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han
{"title":"短波长发光二极管的设计","authors":"Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han","doi":"10.1109/ICOOM.2012.6316235","DOIUrl":null,"url":null,"abstract":"We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The design of short wavelength light emitting diodes\",\"authors\":\"Zhibin Zhao, quốc tế, Yang Hao, Yuhuan Shuai, Liu Lei, Tian Chao-qun, Wei Dong-han\",\"doi\":\"10.1109/ICOOM.2012.6316235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们展示了基于algan的极短波长的多量子阱发光二极管的结构。利用APSYS软件进行仿真,可以达到280nm的波长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The design of short wavelength light emitting diodes
We demonstrate the structure from AlGaN-based multiple quantum well light emitting diodes at very short wavelength. Using software APSYS to simulate, 280nm wavelength can be achieved.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信