S. Hashimoto, Hiroki Kosugiyama, K. Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, K. Ohmori, Takanobu Watanabe
{"title":"像力效应对栅极-全能级肖特基势垒隧道场效应管的影响","authors":"S. Hashimoto, Hiroki Kosugiyama, K. Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, K. Ohmori, Takanobu Watanabe","doi":"10.1109/INEC.2014.7460424","DOIUrl":null,"url":null,"abstract":"We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of image force effect on gate-all-around Schottky barrier tunnel FET\",\"authors\":\"S. Hashimoto, Hiroki Kosugiyama, K. Takei, Jing Sun, Yuji Kawamura, Yasuhiro Shikahama, K. Ohmori, Takanobu Watanabe\",\"doi\":\"10.1109/INEC.2014.7460424\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.\",\"PeriodicalId\":188668,\"journal\":{\"name\":\"2014 IEEE International Nanoelectronics Conference (INEC)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2014.7460424\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2014.7460424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of image force effect on gate-all-around Schottky barrier tunnel FET
We demonstrate that the image force effects in low-dimensional Si are highly controllable to achieve the best possible performance of the gate-all-around (GAA) Schottky barrier tunneling FET (SB-TFET). Our finite element electrostatic calculation shows that the image potential lowers near the metal source/drain, whereas it rises in the proximity of the gate insulator. Moreover, the drain induced barrier lowering (DIBL) of GAA-SB-TFET is suppressed by the image forces in a thin Si nanowire of about 4.0nm diameter.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
