高掺砷硼硅表面外延沟道质量的改善及其对隧道场效应管性能的影响

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948790

Y. Morita, T. Mori, S. Migita, W. Mizubayashi, K. Fukuda, T. Matsukawa, K. Endo, S. O'Uchi, Yongxun Liu, M. Masahara, H. Ota

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引用次数: 0

摘要

我们评估了隧道结质量对隧道场效应晶体管(tfet)性能的影响。在大量砷和硼掺杂的Si表面的外延沟道生长之前，执行顺序的表面清洗程序可以改善p-和n- tfet的界面质量。同时，tfet的亚阈值摆幅(SS)值随着接口质量的提高而逐步提高。

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Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

We evaluate the impact of tunnel junction quality on the performance of tunnel field-effect transistors (TFETs). Performing a sequential surface cleaning procedure prior to epitaxial channel growth for heavily arsenic- and boron-doped Si surfaces improves the interface quality both for p- and n-TFETs. Simultaneously, the subthreshold swing (SS) values of the TFETs improve step-by-step with interface quality.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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