热处理对二维射频磁控溅射Bi/sub 4/Ti/sub 3/O/sub 12/薄膜电性能的影响

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. Pub Date : 2002-05-28 DOI:10.1109/ISAF.2002.1195896

K. Kudoh, T. Higuchi, M. Iwasa, M. Hosomizu, T. Tsukamoto

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引用次数: 0

摘要

以Bi/sub 2/O/sub 3/和TiO/sub 2/为靶材，采用二维射频磁控溅射技术在Pt/Ti/SiO/sub 2/ Si衬底上沉积了B/sub 4/Ti/sub 3/O/ O/sub 12/ (BIT)铁电薄膜。当施加于Bi/sub 2/O/sub 3/和TiO/sub 2/的射频功率分别为100 W和200 W时，BIT薄膜呈现化学计量成分。O/sub / 2 -退火后的BIT薄膜具有良好的极化电压滞回。剩余极化和矫顽力场分别为11.5 /spl mu/C/cm/sup 2/和E/sub C/=123.1 kV/cm。介电常数约为180。

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Effect of heat treatment on electric properties of Bi/sub 4/Ti/sub 3/O/sub 12/ thin films by two-dimensional RF magnetron sputtering

Ferroelectric B/sub 4/Ti/sub 3/O/sub 12/ (BIT) thin films were deposited on Pt/Ti/SiO/sub 2//Si substrates by a two-dimensional RF magnetron sputtering with Bi/sub 2/O/sub 3/ and TiO/sub 2/ targets. When the RF powers applied to Bi/sub 2/O/sub 3/ and TiO/sub 2/ were fixed at 100 W and 200 W, respectively, the BIT thin film exhibited stoichiometric composition. The O/sub 2/-annealed BIT thin film exhibited a good polarization-voltage hysteresis loop. Then, the remanent polarization and coercive field were 11.5 /spl mu/C/cm/sup 2/ and E/sub C/=123.1 kV/cm, respectively. The dielectric constant was about 180.

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Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002.

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