{"title":"超浅结制造中硼基超低能掺杂先进技术","authors":"S. Qin, Y. J. Hu, A. Mcteer","doi":"10.1109/IWJT.2010.5474885","DOIUrl":null,"url":null,"abstract":"The focus of this paper is a comparative study of the advanced boron-based ultra-low energy (ULE) doping techniques on ultra-shallow junction (USJ) fabrications, including beam-line atomic <sup>11</sup>B implant, BF<inf>2</inf>, B<inf>18</inf>H<inf>22</inf>, C<inf>2</inf>B<inf>10</inf>H<inf>12</inf> molecular implants, cluster B implant, and B<inf>2</inf>H<inf>6</inf> and BF<inf>3</inf> PLAD implants. It has been found that B<inf>2</inf>H<inf>6</inf> PLAD and B<inf>18</inf>H<inf>22</inf> molecular implants demonstrate the best R<inf>S</inf>-x<inf>j</inf> and abruptness characteristics. Beam-line BF<inf>2</inf> implant shows poor R<inf>S</inf>-x<inf>j</inf> characteristics due to its serious RIE effect by F species. Cluster B implant shows the worst R<inf>S</inf>-x<inf>j</inf> characteristics and a very rough surface. Both are attributed to its serious self-sputtering effect because of its much larger and heavier ion species although further optimization may lead to improvement.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Advanced boron-based ultra-low energy doping techniques on ultra-shallo junction fabrications\",\"authors\":\"S. Qin, Y. J. Hu, A. Mcteer\",\"doi\":\"10.1109/IWJT.2010.5474885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The focus of this paper is a comparative study of the advanced boron-based ultra-low energy (ULE) doping techniques on ultra-shallow junction (USJ) fabrications, including beam-line atomic <sup>11</sup>B implant, BF<inf>2</inf>, B<inf>18</inf>H<inf>22</inf>, C<inf>2</inf>B<inf>10</inf>H<inf>12</inf> molecular implants, cluster B implant, and B<inf>2</inf>H<inf>6</inf> and BF<inf>3</inf> PLAD implants. It has been found that B<inf>2</inf>H<inf>6</inf> PLAD and B<inf>18</inf>H<inf>22</inf> molecular implants demonstrate the best R<inf>S</inf>-x<inf>j</inf> and abruptness characteristics. Beam-line BF<inf>2</inf> implant shows poor R<inf>S</inf>-x<inf>j</inf> characteristics due to its serious RIE effect by F species. Cluster B implant shows the worst R<inf>S</inf>-x<inf>j</inf> characteristics and a very rough surface. Both are attributed to its serious self-sputtering effect because of its much larger and heavier ion species although further optimization may lead to improvement.\",\"PeriodicalId\":205070,\"journal\":{\"name\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2010.5474885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced boron-based ultra-low energy doping techniques on ultra-shallo junction fabrications
The focus of this paper is a comparative study of the advanced boron-based ultra-low energy (ULE) doping techniques on ultra-shallow junction (USJ) fabrications, including beam-line atomic 11B implant, BF2, B18H22, C2B10H12 molecular implants, cluster B implant, and B2H6 and BF3 PLAD implants. It has been found that B2H6 PLAD and B18H22 molecular implants demonstrate the best RS-xj and abruptness characteristics. Beam-line BF2 implant shows poor RS-xj characteristics due to its serious RIE effect by F species. Cluster B implant shows the worst RS-xj characteristics and a very rough surface. Both are attributed to its serious self-sputtering effect because of its much larger and heavier ion species although further optimization may lead to improvement.
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