抗侧信道攻击的安全集成电路和设计技术

I. Verbauwhede, K. Tiri, D. Hwang, P. Schaumonr
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引用次数: 17

摘要

用于安全应用的集成电路,如智能卡,会泄露信息。可以通过监测集成电路的执行时间、功率变化和/或电磁辐射来猜测密钥或其他敏感信息。这类所谓的侧信道攻击不需要昂贵的设备或侵入式监控就能有效。我们已经证明,通过监控仅2000次加密的功耗,我们可以从AES加密算法的常规标准CMOS实现中获得密钥。这比2128个可能破解该算法的加密密钥的数学安全性要低几个数量级。这个问题的根本原因是,标准CMOS是节能的,它只会消耗动态功率时,节点进行切换。已经提出了数学解决方案,包括随机化和掩蔽技术。我们最初的方法是在电路层面解决问题。而不是一个完整的自定义布局,一些关键的修改被纳入一个常规的同步CMOS标准单元设计流程。提出了抗侧信道攻击的基础,调整了合成和放置路由程序的库数据库和约束文件。我们展示了两个功能相同的协处理器的测量结果,这两个协处理器使用台积电6M 0.18mum CMOS制造。我们还讨论了在未来技术中实现ic时的侧通道电阻问题
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Circuits and design techniques for secure ICs resistant to side-channel attacks
Integrated circuits used for security applications, such as smart-cards, leak information. The key or other sensitive information can be guessed by monitoring the execution time, the power variation and/or the electromagnetic radiation of the integrated circuit. This class of so-called side-channel attacks doesn't need expensive equipment or intrusive monitoring to be effective. We have shown that we can obtain the secret key out of a regular standard CMOS implementation of the AES encryption algorithm by monitoring the power consumption of only 2000 encryptions. This is orders of magnitude lower than the mathematical security of 2128 possible encryption keys to break the algorithm. The root cause of this problem is that standard CMOS is power efficient and it will only consume dynamic power when nodes are switching. Mathematical solutions have been proposed that include randomization and masking techniques. Our original approach is that we address the problem at circuit level. Instead of a full custom layout, a few key modifications are incorporated in a regular synchronous CMOS standard cell design flow. We present the basis for side-channel attack resistance and adjust the library databases and constraint files of the synthesis and place & route procedures. We show the measurement results on two functionally identical co-processors which were fabricated using a TSMC 6M 0.18mum CMOS. We also discuss issues of side-channel resistance when implementing ICs in future technologies
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