一种新型高/声压级kappa/ AlN电介质可编程擦除电容器

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367791

C. Lai, M. Ma, C.F. Cheng, A. Chin, S. Mcalister, C.X. Zhu, M. Li, D. Kwong

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引用次数: 1

摘要

我们首次展示了一种新型的高/spl kappa/ AlN电容器，它可以在/spl plusmn/4 V的电压下可编程擦除，并且对1T1C存储器具有良好的保留性。Al/sub 2/O/sub 3/或其他已知的单高/声压级kappa/层电容器没有显示这些特征。良好的数据保留发生在/spl + /4 V P/E后的阈值变化仅为0.06，为10/sup 4/s，并显示潜在的长内存时间。

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A novel program-erasable capacitor using high-/spl kappa/ AlN dielectric

We demonstrate, for the first time, a novel high-/spl kappa/ AlN capacitor that can be program-erasable at voltages of /spl plusmn/4 V and that has good retention for 1T1C memory. These features are not shown by Al/sub 2/O/sub 3/, or other known single high-/spl kappa/ layer capacitors. Good data retention occurs with a threshold change of only 0.06 after /spl plusmn/4 V P/E for 10/sup 4/s and shows potentially long memory time.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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