{"title":"故障分析和质量保证的全芯片分层","authors":"D. Douglass, K. Godin","doi":"10.31399/asm.edfa.2023-2.p004","DOIUrl":null,"url":null,"abstract":"\n Broad ion beam delayering is a versatile technique for whole-chip failure analysis. The large area of uniformity coupled with the ability to precisely stop at the layer of interest facilitates repeatable, rapid defect detection anywhere on the chip.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Whole-Chip Delayering for Failure Analysis and Quality Assurance\",\"authors\":\"D. Douglass, K. Godin\",\"doi\":\"10.31399/asm.edfa.2023-2.p004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Broad ion beam delayering is a versatile technique for whole-chip failure analysis. The large area of uniformity coupled with the ability to precisely stop at the layer of interest facilitates repeatable, rapid defect detection anywhere on the chip.\",\"PeriodicalId\":431761,\"journal\":{\"name\":\"EDFA Technical Articles\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EDFA Technical Articles\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.edfa.2023-2.p004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2023-2.p004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Whole-Chip Delayering for Failure Analysis and Quality Assurance
Broad ion beam delayering is a versatile technique for whole-chip failure analysis. The large area of uniformity coupled with the ability to precisely stop at the layer of interest facilitates repeatable, rapid defect detection anywhere on the chip.